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K9F1208D0B-Y中文资料三星数据手册PDF规格书
K9F1208D0B-Y规格书详情
GENERAL DESCRIPTION
Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1208X0B¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1208X0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
FEATURES
• Voltage Supply
- 1.8V device(K9F1208Q0B) : 1.70~1.95V
- 2.65V device(K9F1208D0B) : 2.4~2.9V
- 3.3V device(K9F1208U0B) : 2.7 ~ 3.6 V
• Organization
- Memory Cell Array : (64M + 2048K)bit x 8 bit
- Data Register : (512 + 16)bit x 8bit
• Automatic Program and Erase
- Page Program : (512 + 16)Byte
- Block Erase : (16K + 512)Byte
• Page Read Operation
- Page Size : (512 + 16)Byte
- Random Access : 15ms(Max.)
- Serial Page Access : 50ns(Min.)
• Fast Write Cycle Time
- Program time : 200ms(Typ.)
- Block Erase Time : 2ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
• Command Register Operation
• Intelligent Copy-Back
• Unique ID for Copyright Protection
• Package
- K9F1208X0B-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F1208X0B-GCB0/GIB0
63- Ball FBGA (8.5 x 13 , 1.0 mm width)
- K9F1208U0B-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F1208X0B-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
- K9F1208X0B-JCB0/JIB0
63- Ball FBGA - Pb-free Package
- K9F1208U0B-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9F1208U0B-V,F(WSOPI ) is the same device as K9F1208U0B-Y,P(TSOP1) except package type.
产品属性
- 型号:
K9F1208D0B-Y
- 制造商:
SAMSUNG
- 制造商全称:
Samsung semiconductor
- 功能描述:
64M x 8 Bit NAND Flash Memory
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
24+ |
NA/ |
58 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
SAMSUNG |
2016+ |
BGA |
6000 |
公司只做原装,假一罚十,可开17%增值税发票! |
询价 | ||
ON/MOT |
23+ |
大铁帽 |
6500 |
全新原装假一赔十 |
询价 | ||
SAMSUNG/三星 |
25+ |
FBGA |
996880 |
只做原装,欢迎来电资询 |
询价 | ||
SAMSUNG |
24+ |
BGA |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
询价 | ||
SAMSUNG |
2023+ |
TSSOP |
50000 |
原装现货 |
询价 | ||
SAMSUNG/三星 |
24+ |
FBGA |
12000 |
原装正品 有挂就有货 |
询价 | ||
SAMSUNG |
22+ |
BGA |
8000 |
原装正品支持实单 |
询价 | ||
TSOP |
22+ |
ALTERA |
30000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
询价 | ||
SAMSUNG/三星 |
24+ |
FBGA |
13718 |
只做原装 公司现货库存 |
询价 |