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K9F1208U0C-J

FLASH MEMORY

GENERAL DESCRIPTION Offered in 64Mx8bits, the K9F1208X0C is 512Mbit with spare 16Mbit capacity. The device is offered in 1.8V, 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200µ

文件:685.65 Kbytes 页数:38 Pages

Samsung

三星

K9F1208U0C-P

FLASH MEMORY

GENERAL DESCRIPTION Offered in 64Mx8bits, the K9F1208X0C is 512Mbit with spare 16Mbit capacity. The device is offered in 1.8V, 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200µ

文件:685.65 Kbytes 页数:38 Pages

Samsung

三星

K9F1208U0M-

64M x 8 Bit NAND Flash Memory

General Description The K9F1208U0M is a 64M(67,108,864)x8bit NAND Flash Memory with a spare 2,048K(2,097,152)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte page and an er

文件:1.13902 Mbytes 页数:41 Pages

Samsung

三星

DS_K9F1208U0M

64M x 8 Bit NAND Flash Memory

General Description The K9F1208U0M is a 64M(67,108,864)x8bit NAND Flash Memory with a spare 2,048K(2,097,152)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte page and an er

文件:1.13902 Mbytes 页数:41 Pages

Samsung

三星

K9F1208U0

64M x 8 Bit NAND Flash Memory

General Description The K9F1208U0M is a 64M(67,108,864)x8bit NAND Flash Memory with a spare 2,048K(2,097,152)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte page and an er

文件:1.13902 Mbytes 页数:41 Pages

Samsung

三星

K9F1208U0A

64M x 8 Bit , 32M x 16 Bit NAND Flash Memory

GENERAL DESCRIPTION Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical

文件:748.18 Kbytes 页数:46 Pages

Samsung

三星

详细参数

  • 型号:

    K9F1208U0C-J

  • 制造商:

    SAMSUNG

  • 制造商全称:

    Samsung semiconductor

  • 功能描述:

    FLASH MEMORY

供应商型号品牌批号封装库存备注价格
SAMSUNG
2016+
BGA
7534
只做原装,假一罚十,公司可开17%增值税发票!
询价
SAMSUNG
BGA
7534
正品原装--自家现货-实单可谈
询价
SAMSUNG
25+
BGA
7634
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
SAMSUNG
24+
TSOP
100000
专营DDR内存芯片原装进口现货
询价
SAMSUNG
23+
BGA
8560
受权代理!全新原装现货特价热卖!
询价
SAMSUNG
三年内
1983
只做原装正品
询价
SAMSUNG/三星
1119
FLASH-NAND/64MX8NANDSLC/
4000
原装香港现货真实库存。低价
询价
SAMSUNG
24+
BGA
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
询价
SAMSUNG/三星
20+
BGA
2800
绝对全新原装现货,欢迎来电查询
询价
SAMSUNG
11+
BGA
2023
全新原装现货
询价
更多K9F1208U0C-J供应商 更新时间2025-10-10 10:10:00