DS_K9F1208U0M中文资料三星数据手册PDF规格书

General Description

The K9F1208U0M is a 64M(67,108,864)x8bit NAND Flash Memory with a spare 2,048K(2,097,152)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data.

Features

· Voltage Supply : 2.7V~3.6V

· Organization

- Memory Cell Array : (64M + 2,048K)bit x 8bit

- Data Register : (512 + 16)bit x8bit multipled by four planes

· Automatic Program and Erase

- Page Program : (512 + 16)Byte

- Block Erase : (16K + 512)Byte

· 528-Byte Page Read Operation

- Random Access : 12ms(Max.)

- Serial Page Access : 50ns(Min.)

· Fast Write Cycle Time

- Program time : 200ms(Typ.)

- Block Erase Time : 2ms(Typ.)

· Command/Address/Data Multiplexed I/O Port

· Hardware Data Protection

- Program/Erase Lockout During Power Transitions

· Reliable CMOS Floating-Gate Technology

- Endurance : 100K Program/Erase Cycles

- Data Retention : 10 Years

· Command Register Operation

· Intelligent Copy-Back Operation

· Package :

- K9F1208U0M-YCB0, K9F1208U0M-YIB0 : 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

· Simultaneous Four Page/Block Program/Erase