丝印：K9F；Package：SOT-23；High-voltage Amplifier Transistor (100V, 100mA)

Features 1) High breakdown voltage. (BVCEO=100V) 2) Complements the BSS63 HZG. Application HIGH VOLTAGE AMPLIFIER

文件：1.43838 Mbytes 页数：10 Pages

ROHM

罗姆

64M x 8 Bit NAND Flash Memory

GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.7V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200µs o

文件：1.02953 Mbytes 页数：45 Pages

Samsung

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64M x 8 Bits NAND Flash Memory

GENERAL DESCRIPTION Offered in 64Mx8bits, the K9F1208X0C is 512Mbit with spare 16Mbit capacity. The device is offered in 1.8V, 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200µ

文件：824.15 Kbytes 页数：38 Pages

Samsung

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FLASH MEMORY

GENERAL DESCRIPTION Offered in 64Mx8bits, the K9F1208X0C is 512Mbit with spare 16Mbit capacity. The device is offered in 1.8V, 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200µ

文件：685.65 Kbytes 页数：38 Pages

Samsung

三星

64M x 8 Bit , 32M x 16 Bit NAND Flash Memory

GENERAL DESCRIPTION Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical

文件：748.18 Kbytes 页数：46 Pages

Samsung

三星

64M x 8 Bit , 32M x 16 Bit NAND Flash Memory

GENERAL DESCRIPTION Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical

文件：748.18 Kbytes 页数：46 Pages

Samsung

三星

64M x 8 Bit , 32M x 16 Bit NAND Flash Memory

GENERAL DESCRIPTION Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical

文件：748.18 Kbytes 页数：46 Pages

Samsung

三星

64M x 8 Bit NAND Flash Memory

GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on

文件：767.01 Kbytes 页数：45 Pages

Samsung

三星

64M x 8 Bit NAND Flash Memory

GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on

文件：767.01 Kbytes 页数：45 Pages

Samsung

三星

64M x 8 Bit NAND Flash Memory

GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on

文件：767.01 Kbytes 页数：45 Pages

Samsung

三星