K62

型号：BAT64AW-13-F；Package：SOT323；SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features LowForwardVoltageDrop FastSwitching Ultra-SmallSurfaceMountPackage PNJunctionGuardRingforTransientProtection TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Notes3) QualifiedtoAEC-Q101StandardsforHig

K62

型号：BAT64AW-7-F；Package：SOT323；SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features LowForwardVoltageDrop FastSwitching Ultra-SmallSurfaceMountPackage PNJunctionGuardRingforTransientProtection TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Notes3) QualifiedtoAEC-Q101StandardsforHig

K62

型号：NCS20062DTBR2G；Package：TSSOP-8；3 MHz, 125 A Low Power Operational Amplifier

TheNCS20061/2/4isafamilyofsingle,dualandquadOperational Amplifiers(OpAmps)with3MHzofGain−BandwidthProduct (GBWP)whileconsumingonly125AofQuiescentcurrentper opamp.TheNCS2006xhasInputOffsetVoltageof4mVandoperates from1.8Vto5.5Vsupplyvoltageoverawi

K62

型号：NCV20062DTBR2G；Package：TSSOP-8；3 MHz, 125 A Low Power Operational Amplifier

TheNCS20061/2/4isafamilyofsingle,dualandquadOperational Amplifiers(OpAmps)with3MHzofGain−BandwidthProduct (GBWP)whileconsumingonly125AofQuiescentcurrentper opamp.TheNCS2006xhasInputOffsetVoltageof4mVandoperates from1.8Vto5.5Vsupplyvoltageoverawi

K62A

型号：1.0SMB62A；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 1000Wpeakpulsepowercapabilityat10/1000μswaveform, epetitionrate(dutycycle):0.01%

K62C

型号：1.0SMB62CA；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 1000Wpeakpulsepowercapabilityat10/1000μswaveform, epetitionrate(dutycycle):0.01%

K62J60W5

型号：TK62J60W5；Package：TO-3P；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=170ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.036Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS

K62N60W5

型号：TK62N60W5；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=170ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.036Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS

K62N60X

型号：TK62N60X；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.033Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=3.1mA)

K62Z60X

型号：TK62Z60X；Package：TO-247-4L；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.033Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=3.1mA)