丝印：K62；Package：SOT323；SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features  Low Forward Voltage Drop  Fast Switching  Ultra-Small Surface Mount Package  PN Junction Guard Ring for Transient Protection  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Notes 3)  Qualified to AEC-Q101 Standards for Hig

文件：318.7 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：K62；Package：SOT323；SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features  Low Forward Voltage Drop  Fast Switching  Ultra-Small Surface Mount Package  PN Junction Guard Ring for Transient Protection  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Notes 3)  Qualified to AEC-Q101 Standards for Hig

文件：318.7 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：K62；Package：TSSOP-8；3 MHz, 125 A Low Power Operational Amplifier

The NCS20061/2/4 is a family of single, dual and quad Operational Amplifiers (Op Amps) with 3 MHz of Gain−Bandwidth Product (GBWP) while consuming only 125 A of Quiescent current per opamp. The NCS2006x has Input Offset Voltage of 4 mV and operates from 1.8 V to 5.5 V supply voltage over a wi

文件：1.66071 Mbytes 页数：27 Pages

ONSEMI

安森美半导体

丝印：K62；Package：TSSOP-8；3 MHz, 125 A Low Power Operational Amplifier

The NCS20061/2/4 is a family of single, dual and quad Operational Amplifiers (Op Amps) with 3 MHz of Gain−Bandwidth Product (GBWP) while consuming only 125 A of Quiescent current per opamp. The NCS2006x has Input Offset Voltage of 4 mV and operates from 1.8 V to 5.5 V supply voltage over a wi

文件：1.66071 Mbytes 页数：27 Pages

ONSEMI

安森美半导体

丝印：K62A；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, epetition r ate (duty cycle): 0.01%

文件：1.26024 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：K62C；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, epetition r ate (duty cycle): 0.01%

文件：1.26024 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：K62J60W5；Package：TO-3P；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 170 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.036 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS

文件：234.84 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K62N60W5；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 170 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.036 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS

文件：239.06 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K62N60X；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.033 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 3.1 mA)

文件：240.36 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K62Z60X；Package：TO-247-4L；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.033 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 3.1 mA)

文件：272.64 Kbytes 页数：10 Pages

TOSHIBA

东芝