丝印：K62N60W5；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 170 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.036 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS

文件：239.06 Kbytes 页数：10 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件：432.32 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET (N-ch 500V VDSS 700V)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：DTMOSⅣ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID 61.8 A \nPower Dissipation PD 400 W \nDrain-Source voltage VDSS 600 V \nGate-Source voltage VGSS +/-30 V ;

Toshiba

东芝

TO220F

TOSHIBA/东芝

上传：深圳市东来宝电子科技有限公司

TO-220F

TOSHIBA/东芝

上传：深圳庞田科技有限公司