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MMST3906

Marking:K5N;Package:SOT-323;PNP Silicon Epitaxial Planar Transistor

FEATURES ●Powerdissipation. ●Epitaxialplanardieconstruction. ●ComplementarytoMMST3904. ●Alsoavailableinleadfreeversion. APPLICATIONS ●Generalpurposeapplicationandswitchingapplication.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

PHK5NQ15T

Marking:K5NQ15T;Package:SOT96-1;N-channel TrenchMOS standard level FET

1.Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 2.Featuresandbenefits •Lo

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

TK560A60Y

Marking:K560A60Y;Package:TO-220SIS;MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.43Ω(typ.)byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.24mA)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TK560A65Y

Marking:K560A65Y;Package:TO-220SIS;MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.43Ω(typ.)byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.24mA)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TK5A80E

Marking:K5A80E;Package:TO-220SIS;MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=1.9Ω(typ.) (2)Lowleakagecurrent:IDSS=10μA(max)(VDS=640V) (3)Enhancementmode:Vth=2.5to4.0V(VDS=10V,ID=0.5mA)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TK5A90E

Marking:K5A90E;Package:TO-220SIS;MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=2.5Ω(typ.) (2)Lowleakagecurrent:IDSS=10μA(max)(VDS=720V) (3)Enhancementmode:Vth=2.5to4.0V(VDS=10V,ID=0.45mA)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TK5R0A15Q5

Marking:K5R0A15Q5;Package:TO-220SIS;MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)Fastreverserecoverytime:trr=52ns(typ.) (2)Smallreverserecoverycharge:Qrr=55nC(typ.) (3)Smallgatecharge:QSW=26nC(typ.) (4)Lowdrain-sourceon-resistance:RD

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TS3021AILT

Marking:K522;Package:SOT23-5;Rail-to-rail 1.8 V high-speed comparator

Features •Propagationdelay:38ns •Lowcurrentconsumption:73μA •Rail-to-railinputs •Push-pulloutputs •Supplyoperationfrom1.8to5V •Widetemperaturerange:-40°Cto125°C •HighESDtolerance:5kVHBM,300VMM •SMDpackages •Automotivequalification Applications

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

TS3021ICT

Marking:K52;Package:SC70-5;Rail-to-rail 1.8 V high-speed comparator

Features •Propagationdelay:38ns •Lowcurrentconsumption:73μA •Rail-to-railinputs •Push-pulloutputs •Supplyoperationfrom1.8to5V •Widetemperaturerange:-40°Cto125°C •HighESDtolerance:5kVHBM,300VMM •SMDpackages •Automotivequalification Applications

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

TS3021ILT

Marking:K520;Package:SOT23-5;Rail-to-rail 1.8 V high-speed comparator

Features •Propagationdelay:38ns •Lowcurrentconsumption:73μA •Rail-to-railinputs •Push-pulloutputs •Supplyoperationfrom1.8to5V •Widetemperaturerange:-40°Cto125°C •HighESDtolerance:5kVHBM,300VMM •SMDpackages •Automotivequalification Applications

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

详细参数

  • 型号:

    K5

  • 制造商:

    PRO-LITE

  • 功能描述:

    LAMP D-ENDED 110V 254MM 150W

供应商型号品牌批号封装库存备注价格
WILLSEMI
23+
FBP-02C
15000
全新原装现货,价格优势
询价
FAIRCHILD
24+
TO-3P
9500
郑重承诺只做原装进口现货
询价
N/A
2048+
SOT-89
9851
只做原装正品现货!或订货假一赔十!
询价
N/A
23+
SOT-89
8000
只做原装现货
询价
CMOS/场效应半导体
23+
TO-220
69820
终端可以免费供样,支持BOM配单!
询价
SAMSUNG/三星
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
TOSHIBA/东芝
2223+
SOT-563-6
26800
只做原装正品假一赔十为客户做到零风险
询价
SAMSUNG
24+
BGA
20000
低价现货抛售(美国 香港 新加坡)
询价
NA
24+
NA
60000
询价
BOSCH/博世
LGA8
6698
询价
更多K5供应商 更新时间2025-6-20 16:55:00