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K4H510438D

512Mb D-die DDR SDRAM Specification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung semiconductor

三星三星半导体

K4H510438D

DDR SDRAM Product Guide

ConsumerMemory

SamsungSamsung semiconductor

三星三星半导体

K4H510438D-TCA0

128Mb DDR SDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung semiconductor

三星三星半导体

K4H510438D-TCA2

128Mb DDR SDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung semiconductor

三星三星半导体

K4H510438D-TCB0

128Mb DDR SDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung semiconductor

三星三星半导体

K4H510438D-TLA0

128Mb DDR SDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung semiconductor

三星三星半导体

K4H510438D-TLA2

128Mb DDR SDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung semiconductor

三星三星半导体

K4H510438D-TLB0

128Mb DDR SDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung semiconductor

三星三星半导体

K4H510438D-UC/LA2

512Mb D-die DDR SDRAM Specification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung semiconductor

三星三星半导体

K4H510438D-UC/LB0

512Mb D-die DDR SDRAM Specification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung semiconductor

三星三星半导体

详细参数

  • 型号:

    K4H510438D

  • 制造商:

    SAMSUNG

  • 制造商全称:

    Samsung semiconductor

  • 功能描述:

    DDR SDRAM Product Guide

供应商型号品牌批号封装库存备注价格
SAMSUNG
23+
BGA
5000
原装正品,假一罚十
询价
SAMSUNG
23+
BGAP/B
8560
受权代理!全新原装现货特价热卖!
询价
SAMSUNG
25+23+
TSSOP66
36634
绝对原装正品全新进口深圳现货
询价
SAMSUNG
24+
TSSOP
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
询价
SAMSUNG
20+
TSSOP66
2960
诚信交易大量库存现货
询价
Samsung
2022+
47
全新原装 货期两周
询价
SAMSUNG/三星
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
SAMSUNG/三星
23+
BGA
50000
全新原装正品现货,支持订货
询价
SAMSUNG/三星
21+
TSOP66
10000
原装现货假一罚十
询价
SAMSUNG/三星
23+
60FBGA
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
更多K4H510438D供应商 更新时间2025-7-27 15:36:00