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K4H510438D中文资料PDF规格书
K4H510438D规格书详情
Key Features
• VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333
• VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
-. Read latency : DDR266(2, 2.5 Clock), DDR333(2.5 Clock), DDR400(3 Clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• LDM,UDM for write masking only (x16)
• DM for write masking only (x4, x8)
• Auto & Self refresh
• 7.8us refresh interval(8K/64ms refresh)
• Maximum burst refresh cycle : 8
• 66pin TSOP II Pb-Free package
• RoHS compliant
产品属性
- 型号:
K4H510438D
- 制造商:
SAMSUNG
- 制造商全称:
Samsung semiconductor
- 功能描述:
DDR SDRAM Product Guide
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
2019 |
BGA |
55000 |
专营原装正品现货 |
询价 | ||
SAMSUNG |
2023+ |
TSOP66 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
SAMSANG |
19+ |
TSOP66 |
256800 |
原厂代理渠道,每一颗芯片都可追溯原厂; |
询价 | ||
SAMSUNG/三星 |
TSOP66 |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
SAMSUNG |
23+ |
BULK BGA |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
SAMSUNG/三星 |
23+ |
BGA |
6000 |
只做原装 |
询价 | ||
SAMSUNG |
22+ |
BGA |
8000 |
原装正品支持实单 |
询价 | ||
SAMSUNG |
0831+ |
TSOP66 |
280 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
SAMSUNG |
23+ |
BGAP/B |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
SAMSUNG |
23+ |
BGA |
1223 |
特价库存 |
询价 |