首页 >K4H510838C-ULCC>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

K4H510838C-ULCC

512Mb C-die DDR SDRAM Specification

SamsungSamsung semiconductor

三星三星半导体

K4H510838C-ZCCC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung semiconductor

三星三星半导体

K4H510838C-ZLCC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung semiconductor

三星三星半导体

K4H510838D

DDRSDRAMProductGuide

ConsumerMemory

SamsungSamsung semiconductor

三星三星半导体

K4H510838D

512MbD-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung semiconductor

三星三星半导体

K4H510838D-LCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung semiconductor

三星三星半导体

K4H510838D-UC/LCC

512MbD-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung semiconductor

三星三星半导体

K4H510838D-UC/LCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung semiconductor

三星三星半导体

K4H510838D-UCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung semiconductor

三星三星半导体

K4H510838D-UCSLASHLCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung semiconductor

三星三星半导体

详细参数

  • 型号:

    K4H510838C-ULCC

  • 制造商:

    SAMSUNG

  • 制造商全称:

    Samsung semiconductor

  • 功能描述:

    512Mb C-die DDR SDRAM Specification

供应商型号品牌批号封装库存备注价格
SAMSUNG
24+
BGA
18
询价
SAMSUNG
23+
BGA
1147
特价库存
询价
SAMSUNG
24+
BGA
5000
全现原装公司现货
询价
SAMSUNG
23+
BGA
65480
询价
SAMSUNG/三星
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
SAMSUNG/三星
23+
BGA
50000
全新原装正品现货,支持订货
询价
SAMSUNG
22+
BGA
8000
原装正品支持实单
询价
SAMSUNG/三星
2023+
BGA
8635
一级代理优势现货,全新正品直营店
询价
SAMSUNG/三星
24+
NA/
3272
原装现货,当天可交货,原型号开票
询价
SAMSUNG
23+
BGA
8000
只做原装现货
询价
更多K4H510838C-ULCC供应商 更新时间2025-7-14 15:30:00