512Mb C-die DDR SDRAM Specification

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512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Dif

文件：366.45 Kbytes 页数：24 Pages

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512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Dif

文件：366.45 Kbytes 页数：24 Pages

SAMSUNG

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512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Dif

文件：366.45 Kbytes 页数：24 Pages

SAMSUNG

三星