K4B4G1646E

4Gb E-die DDR3L SDRAM

K4B4G1646E-BMK0

4Gb E-die DDR3L SDRAM

K4B4G1646E-BMMA

4Gb E-die DDR3L SDRAM

K4B4G1646E-BYK0

4Gb E-die DDR3L SDRAM

K4B4G1646E-BYMA

4Gb E-die DDR3L SDRAM

K4B4G1646E-BYK000

包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：DDR3-1600 4GB (256MX16)1.25NS CL

Samsung Semiconductor, Inc.

K4B4G1646B

4GbB-dieDDR3SDRAMOlnyx16

The4GbDDR3SDRAMB-dieisorganizedasa32Mbitx16I/Osx8banks,device.Thissynchronousdeviceachieveshighspeeddouble-data-ratetransferratesofupto2133Mb/sec/pin(DDR3-2133)forgeneralapplications. KeyFeatures •JEDECstandard1.5V(1.425V~1.575V) •VDDQ=1.5V(1.425V~1.575V)

K4B4G1646B-HCMA

4GbB-dieDDR3SDRAMOlnyx16

The4GbDDR3SDRAMB-dieisorganizedasa32Mbitx16I/Osx8banks,device.Thissynchronousdeviceachieveshighspeeddouble-data-ratetransferratesofupto2133Mb/sec/pin(DDR3-2133)forgeneralapplications. KeyFeatures •JEDECstandard1.5V(1.425V~1.575V) •VDDQ=1.5V(1.425V~1.575V)

K4B4G1646B-HCNB

4GbB-dieDDR3SDRAMOlnyx16

The4GbDDR3SDRAMB-dieisorganizedasa32Mbitx16I/Osx8banks,device.Thissynchronousdeviceachieveshighspeeddouble-data-ratetransferratesofupto2133Mb/sec/pin(DDR3-2133)forgeneralapplications. KeyFeatures •JEDECstandard1.5V(1.425V~1.575V) •VDDQ=1.5V(1.425V~1.575V)

K4B4G1646D-BC

PRODUCTSELECTIONGUIDEDisplays,MemoryandStorage

Samsungcontinuestoleadtheindustrywiththebroadestportfolioofmemoryproductsand displaytechnology.Itsdisplaypanels,DRAM,flash,mobileandgraphicsmemoryarefoundinmany computers–fromultrabookstopowerfulservers–andinawiderangeofhandhelddevicessuch assmartphon

K4B4G1646Q

4GbQ-dieDDR3LSDRAMOlnyx1696FBGAwithLead-Free&Halogen-Free(RoHScompliant)1.35V

K4B4G1646Q-HC

PRODUCTSELECTIONGUIDEDisplays,MemoryandStorage

Samsungcontinuestoleadtheindustrywiththebroadestportfolioofmemoryproductsand displaytechnology.Itsdisplaypanels,DRAM,flash,mobileandgraphicsmemoryarefoundinmany computers–fromultrabookstopowerfulservers–andinawiderangeofhandhelddevicessuch assmartphon