Surface Mount Schottky Rectifier

Features ● Low profile package ● Ideal for automated placement ● Guardring for overvoltage protection ● Low power losses, high efficiency ● High forward surge capability ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件：1.14572 Mbytes 页数：3 Pages

SAMYANG

三阳电子

Surface Mounted Schottky Barrier Rectifiers

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Built-in strain relief,ideal for automated placement Low reverse leakage High forward surge current capability

文件：209.19 Kbytes 页数：2 Pages

GWSEMI

唯圣电子

3.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

文件：183.45 Kbytes 页数：2 Pages

YIXIN

壹芯微

丝印：K38；Package：SOT-363；Dual N-Channel 60 V (D-S) MOSFET

•Low On-Resistance:1.5 FEATURES • Halogen-free According to IEC 61249-2-21 Definition Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

文件：2.25313 Mbytes 页数：6 Pages

DGNJDZ

南晶电子

丝印：K38；Package：SOT-363；Dual N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition •Low On-Resistance:2.5 Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

文件：2.25228 Mbytes 页数：6 Pages

DGNJDZ

南晶电子

丝印：K38；Package：SOT23；50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The BSS138Q is suitable for automotive applications requiring

文件：592.33 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：K38；Package：SOT-323；MOSFET

Features - Fast switching speed. - Low on-resistance. - Low gate threshold voltage. - Low input capacitance. - Low input/output leakage.

文件：549.11 Kbytes 页数：5 Pages

COMCHIP

典琦

丝印：K38；Package：SOT323；50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The BSS138WQ is suitable for automotive applications requiring specific change control;

文件：686.57 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：K38；Package：SOT323；50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The BSS138WQ is suitable for automotive applications requiring specific change control;

文件：686.57 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：K38；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

文件：2.53437 Mbytes 页数：4 Pages

UNSEMI

优恩半导体