丝印：K26S；Package：SOD-123FL；Sidac

Features Excellent capability of absorbing transient surge Quick response to surge voltage (ns Level) Glass passivated junctions High voltage lcmp ignitors

文件：2.80869 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSIII)

Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 800 V) • Enhancement-model: Vth = 2.0 to 4.0 V (VD

文件：232.93 Kbytes 页数：6 Pages

TOSHIBA

东芝

Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Low Qg.

文件：27.91 Kbytes 页数：4 Pages

SANYO

三洋

擁낂쳵?잆궧?ㅳ긿?곥꺍?곁뵪

Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Low Qg.

文件：49.09 Kbytes 页数：4 Pages

SANYO

三洋

RELAY CARD

Features: y Four relay outputs, single pole invertors y Max. load : 240V AC / 3A resistive y 9V DC / 300 mA power supply y Four control-LED's are provided y Is controlled by an open collector output (9V/15 mA) y Dimensions : 76 x 69 x 25 mm.

文件：274.66 Kbytes 页数：8 Pages

VELLEMAN

QUAD TRIAC SWITCH CARD

Features: ; Four triac outputs ; Inputs galvanically isolated by optocouplers. ; 4 control LED's are provided

文件：271.29 Kbytes 页数：12 Pages

VELLEMAN

N-channel MOS-FET

450V 0,65Ω 10A 50W > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - Gene

文件：349.44 Kbytes 页数：2 Pages

FUJI

富士通

N-CHANNEL SILICON POWER MOS-FET

Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±35V Guarantee Avalanche-proof Applications Switching regulators UPS DC-DC converters General purpose power amplifier

文件：90.63 Kbytes 页数：4 Pages

FUJI

富士通

N-CHANNEL SILICON POWER MOS-FET

Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±35V Guarantee Avalanche-proof Applications Switching regulators UPS DC-DC converters General purpose power amplifier

文件：90.63 Kbytes 页数：4 Pages

FUJI

富士通

N-channel MOS-FET

> Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier

文件：366.84 Kbytes 页数：2 Pages

FUJI

富士通