TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSIII)

Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 800 V) • Enhancement-model: Vth = 2.0 to 4.0 V (VD

文件：232.93 Kbytes 页数：6 Pages

TOSHIBA

东芝

无源晶振

KYX

凯越翔电子

无源晶振

KYX

凯越翔电子

Plug-in Signal Conditioners K-UNIT

文件：157.46 Kbytes 页数：6 Pages

MSYSTEM

爱模

Plug-in Signal Conditioners K-UNIT

文件：157.46 Kbytes 页数：6 Pages

MSYSTEM

爱模

Plug-in Signal Conditioners K-UNIT

文件：157.46 Kbytes 页数：6 Pages

MSYSTEM

爱模