NPN Silicon High-Power 90V to 120V, 30A

This specification covers the performance requirements for NPN, silicon, high-power, 2N5671 and 2N5672 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/488. The device package outline is a TO–204AA (similar to TO-3) for all encapsulated device types.;

Microchip

微芯科技

NPN HIGH POWER SILICON TRANSISTOR

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文件：54.55 Kbytes 页数：2 Pages

MICROSEMI

美高森美

Package：TO-204AA，TO-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 90V 30A TO3

MICROCHIP

微芯科技

NPN HIGH POWER SILICON TRANSISTOR

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文件：54.55 Kbytes 页数：2 Pages

MICROSEMI

美高森美

POWER TRANSISTORS(30A,140W)

30 AMPLERE SILICON POWER TRANSISTORS 90-120 VOLTS 140 WATTS

文件：125.56 Kbytes 页数：3 Pages

MOSPEC

统懋

HIGH CURRENT FAST SWITCHING APPLICATIONS

HIGH CURRENT FAST SWITCHING APPLICATIONS The 2N5671 and 2N5672 are silicon multiepitaxialplaner NPN transistors in Jedec TO-3. They are especially intended for high current, fast switching industrial applications.

文件：323.58 Kbytes 页数：3 Pages

COMSET