Darlington NPN Silicon Power 80V 100V, 12A

This specification covers the performance requirements for NPN silicon power Darlington, 2N6058 and 2N6059 transistors. Three levels of product assurance are (JAN, JANTX and JANTXV) provided for each encapsulated device as specified in MIL-PRF-19500/502. The device package outlines are as follows: TO-204AA (similar to TO-3) for all encapsulated device types.;

Microchip

微芯科技

NPN DARLINGTON POWER SILICON TRANSISTOR

NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/502

文件：65.019 Kbytes 页数：2 Pages

MICROSEMI

美高森美

Package：TO-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN DARL 100V 12A TO3

MICROCHIP

微芯科技

DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS

文件：195.37 Kbytes 页数：4 Pages

BOCA

博卡

POWER TRANSISTORS(12A,150W)

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

文件：188.54 Kbytes 页数：4 Pages

MOSPEC

统懋

SILICON NPN POWER DARLINGTON TRANSISTOR

DESCRIPTION The 2N6059 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. It is inteded for use in power linear and low frequency switching applications. ■ STMicrolectronics PREFERRED SALESTYPE ■ HIGH GAIN ■ NPN DARL

文件：64.959 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体