POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.60ohm, Id=-4.0A)

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE (100V, P-CHANNEL) The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: ver

文件：232.35 Kbytes 页数：6 Pages

IRF

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Infineon

英飞凌

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Infineon

英飞凌

P-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

文件：42.42 Kbytes 页数：2 Pages

SEME-LAB

POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.60ohm, Id=-4.0A)

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE (100V, P-CHANNEL) The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: ver

文件：232.35 Kbytes 页数：6 Pages

IRF

P-CHANNEL ENHANCEMENT MOSFET

P-CHANNEL ENHANCEMENT MOSFET

文件：82.19 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司