POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9A)

200 Volt, 0.40Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transis tors. The efficient geometry achieves very low on state resistance combined with high transconductance. HEXFET transistors also feature all of the well-es tablish advantag

文件：236.74 Kbytes 页数：6 Pages

IRF

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)

200 Volt, 0.40Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transis tors. The efficient geometry achieves very low on state resistance combined with high transconductance. HEXFET transistors also feature all of the well-es tablish advantag

文件：151.04 Kbytes 页数：7 Pages

IRF

High-Reliability Transistors

This family of 2N6756, 2N6758, 2N6760 and 2N6762 switching transistors are military qualified up to the JANTXV level for high-reliability applications.  Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both t

Microchip

微芯科技

HiRel MOSFETs

\n优势:;

Infineon

英飞凌