POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=0.300ohm, Id=14A)

The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and di

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IRF

TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.300ohm, Id=14A)

The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and di

文件：144.83 Kbytes 页数：7 Pages

IRF

High-Reliability Transistors

This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications.  These devices are also available in a thru hole TO-254AA leaded package.  Microsemi also offers numerous other transistor products to meet higher a

Microchip

微芯科技

Single channel high reliability power MOSFETs

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Infineon

英飞凌

High-Reliability Transistors

This family of 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 switching transistors are military qualified up to the JANTXV level for high-reliability applications.  These devices are also available in a thru hole TO-204AE metal can package.  Microsemi also offers numerous other transistor products to me

Microchip

微芯科技