JANTXV2N6792资料datasheet下载供应价格IRF-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
JANTXV2N6792	文件：234.11 Kbytes Page：6 Pages	POWER MOSFET N-CHANNEL(BVss=400V, Rds(on)=1.8ohm, Id=2.0A) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE (TO-205AF) The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state 文件：234.11 Kbytes 页数：6 Pages	IRF	IRF
JANTXV2N6792	文件：300 bytes Page：1 Pages	HiRel MOSFETs \n优势:;	Infineon 英飞凌	Infineon
2N6792	文件：15.49 Kbytes Page：1 Pages	N-Channel MOSFET in a Hermetically sealed TO39 Metal Package 文件：15.49 Kbytes 页数：1 Pages	SEME-LAB	SEME-LAB
JANTX2N6792	文件：199.48 Kbytes Page：7 Pages	Repetitive Avalanche Ratings 文件：199.48 Kbytes 页数：7 Pages	IRF	IRF
JANTX2N6792	文件：234.11 Kbytes Page：6 Pages	POWER MOSFET N-CHANNEL(BVss=400V, Rds(on)=1.8ohm, Id=2.0A) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE (TO-205AF) The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state 文件：234.11 Kbytes 页数：6 Pages	IRF	IRF

更多JANTXV2N6792供应商更新时间2026-2-5 14:00:00