POWER MOSFET N-CHANNEL(BVss=400V, Rds(on)=1.8ohm, Id=2.0A)

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE (TO-205AF) The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state

文件：234.11 Kbytes 页数：6 Pages

IRF

Repetitive Avalanche Ratings

文件：199.48 Kbytes 页数：7 Pages

IRF

HiRel MOSFETs

\n优势:;

Infineon

英飞凌

Repetitive Avalanche Ratings

文件：199.48 Kbytes 页数：7 Pages

IRF