POWER MOSFET P-CHANNEL(BVdss=-200V, Rds(on)=0.80ohm, Id=-4.0A)

200V, P-CHANNEL The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance. The HEXFET

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IRF

HEXFET TRANSISTORS THRU-HOLE (TO-205AF)

200V, P-CHANNEL The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance. The HEXFET

文件：135.28 Kbytes 页数：7 Pages

IRF

Repetitive Avalanche Ratings

文件：248.92 Kbytes 页数：7 Pages

IRF

HiRel MOSFETs

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Infineon

英飞凌

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)

BVDSS -200V RDS(on) 0.80Ω ID -4.0A The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. Desinged to be a close replacement for the TO-39 package, the LCC will give designers the extra flexibility they need t

文件：203.34 Kbytes 页数：7 Pages

IRF

Repetitive Avalanche Ratings

文件：248.92 Kbytes 页数：7 Pages

IRF

HiRel MOSFETs

\n优势:;

Infineon

英飞凌