TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)

The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and di

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IRF

POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=1.5ohm, Id=4.5A)

The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and di

文件：234.12 Kbytes 页数：6 Pages

IRF

High-Reliability Transistors

This family of 2N6756, 2N6758, 2N6760 and 2N6762 switching transistors are military qualified up to the JANTXV level for high-reliability applications.  Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both t

Microchip

微芯科技

Single channel high reliability power MOSFETs

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Infineon

英飞凌