NPN Silicon Power 200V to 300V, 5A

This specification covers the performance requirements for NPN, silicon, power, 2N5660, 2N5660U3, 2N5661, 2N5661U3, 2N5662 and 2N5663 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/454. The device packages for the encapsulated device types are as follows: (2N5660 and 2N5661) (similar to TO-66). \nThe device packages for the encapsulated device types are as follows: (2N5662 and 2N5663) (similar to TO-5). \nThe surfacemount device packages for the encapsulated device types are as fol;

Microchip

微芯科技

Package：3-SMD，无引线；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：POWER BJT

Microchip

微芯科技

IR
TO-254

IR

国际整流器

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