N-channel rad hard power MOSFETs

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Infineon

英飞凌

N-channel rad hard power MOSFETs

\n优势:;

Infineon

英飞凌

Radiation Hardened Power MOSFET Surface Mount (SMD-1) 200V, 26A, N-channel, Rad Hard HEXFET™ Technology

Features  Single event effect (SEE) hardened  Low RDS(on)  Low total gate charge  Simple drive requirements  Hermetically sealed  Electrically isolated  Ceramic eyelets  Light weight  Surface Mount  ESD rating: Class 3A per MIL-STD-750, Method 1020 Potential Applications 

文件：1.6901 Mbytes 页数：13 Pages

IRF

Radiation Hardened Power MOSFET Surface Mount (SMD-1) 200V, 26A, N-channel, Rad Hard HEXFET™ Technology

Features  Single event effect (SEE) hardened  Low RDS(on)  Low total gate charge  Simple drive requirements  Hermetically sealed  Electrically isolated  Ceramic eyelets  Light weight  Surface Mount  ESD rating: Class 3A per MIL-STD-750, Method 1020 Potential Applications 

文件：1.6901 Mbytes 页数：13 Pages

IRF

RADIATION HARDENED POWER MOSFET THRU-HOLE

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) International Rectifier’s RAD-Hard TM HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been

文件：264.68 Kbytes 页数：12 Pages

IRF

Radiation Hardened Power MOSFET Surface Mount (SMD-1) 200V, 26A, N-channel, Rad Hard HEXFET™ Technology

Features  Single event effect (SEE) hardened  Low RDS(on)  Low total gate charge  Simple drive requirements  Hermetically sealed  Electrically isolated  Ceramic eyelets  Light weight  Surface Mount  ESD rating: Class 3A per MIL-STD-750, Method 1020 Potential Applications 

文件：1.6901 Mbytes 页数：13 Pages

IRF