RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)

International Rectifier’s RAD-HardTM HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effe

文件：125.52 Kbytes 页数：8 Pages

IRF

Rad hard MOSFETs

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Infineon

英飞凌

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)

International Rectifier’s RAD-HardTM HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effe

文件：125.52 Kbytes 页数：8 Pages

IRF

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)

International Rectifier’s RAD-HardTM HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effe

文件：125.52 Kbytes 页数：8 Pages

IRF

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)

International Rectifier’s RAD-HardTM HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effe

文件：125.52 Kbytes 页数：8 Pages

IRF