JANSG2N7269U

Radiation Hardened Power MOSFET Surface Mount (SMD-1) 200V, 26A, N-channel, Rad Hard HEXFET™ Technology

Features Singleeventeffect(SEE)hardened LowRDS(on) Lowtotalgatecharge Simpledriverequirements Hermeticallysealed Electricallyisolated Ceramiceyelets Lightweight SurfaceMount ESDrating:Class3AperMIL-STD-750,Method1020 PotentialApplications 

JANSF2N7269U

RadiationHardenedPowerMOSFETSurfaceMount(SMD-1)200V,26A,N-channel,RadHardHEXFET™Technology

Features Singleeventeffect(SEE)hardened LowRDS(on) Lowtotalgatecharge Simpledriverequirements Hermeticallysealed Electricallyisolated Ceramiceyelets Lightweight SurfaceMount ESDrating:Class3AperMIL-STD-750,Method1020 PotentialApplications 

JANSR2N7269

RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE

RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE(TO-254AA) InternationalRectifier’sRAD-HardTMHEXFET®technologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.Thesedeviceshavebeen

JANSR2N7269U

RadiationHardenedPowerMOSFETSurfaceMount(SMD-1)200V,26A,N-channel,RadHardHEXFET™Technology

Features Singleeventeffect(SEE)hardened LowRDS(on) Lowtotalgatecharge Simpledriverequirements Hermeticallysealed Electricallyisolated Ceramiceyelets Lightweight SurfaceMount ESDrating:Class3AperMIL-STD-750,Method1020 PotentialApplications 