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2N5883

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3package •Complementtotype2N58852N5886 •Highpowerdissipations APPLICATIONS •Theyareintendedforuseinpowerlinear andswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

2N5883

SILICONEPITAXIALPNPTRANSISTOR

SEME-LAB

Seme LAB

SEME-LAB

2N5883

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3package •Complementtotype2N58852N5886 APPLICATIONS •Theyareintendedforuseinpowerlinear andswitchingapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

2N5883

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3package •Complementtotype2N58852N5886 •Highpowerdissipations APPLICATIONS •Theyareintendedforuseinpowerlinear andswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

2N5883

SiliconPNPPowerTransistors

SAVANTIC

Savantic, Inc.

SAVANTIC

2N5883

SiliconPNPPowerTransistors

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

2N5883

Supplymanagement

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N5883,2N5885seriestypesarecomplementarysiliconepitaxialbasetransistorsdesignedforpoweramplifierandswitchingapplications.

CentralCentral Semiconductor Corp

美国中央半导体

Central

2N5883

POWERTRANSISTORSCOMPLEMENTARYSILICON

...designedforgeneral−purposepoweramplifierandswitchingapplications. Features •LowCollector−EmitterSaturationVoltage− VCE(sat)=1.0Vdc,(max)atIC=15Adc •LowLeakageCurrent-ICEX=1.0mAdc(Max) •ExcellentDCCurrentGain−hFE=20(Min)@IC=10Adc

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

2N5883

POWERTRANSISTORS(25A,200W)

General-PurposePowerAmplifierandSwitchingApplications Features •LowCollector−EmitterSaturationVoltage− VCE(sat)=1.0V(Max)@IC=15A •ExcellentDCCurrentGain− hFE=20~100@IC=10A

MOSPEC

MOSPEC

MOSPEC

2N5883

COMPLEMENTARYSILICONHIGH-POWERTRANSISTORS

General-PurposePowerAmplifierandSwitchingApplications Features •LowCollector−EmitterSaturationVoltage− VCE(sat)=1.0V(Max)@IC=15A •ExcellentDCCurrentGain− hFE=20~100@IC=10A

bocaBoca semiconductor corporation

博卡博卡半导体公司

boca

2N5883

PowerTransistors

PowerTransistors

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

2N5883

ComplementarySiliconHigh?뭁owerTransistors

Complementarysiliconhigh−powertransistorsaredesignedforgeneral−purposepoweramplifierandswitchingapplications. Features •LowCollector−EmitterSaturationVoltage− VCE(sat)=1.0Vdc,(max)atIC=15Adc •LowLeakageCurrent ICEX=1.0mAdc(max)atRatedVoltage •Excell

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

2N5883G

ComplementarySiliconHigh?뭁owerTransistors

Complementarysiliconhigh−powertransistorsaredesignedforgeneral−purposepoweramplifierandswitchingapplications. Features •LowCollector−EmitterSaturationVoltage− VCE(sat)=1.0Vdc,(max)atIC=15Adc •LowLeakageCurrent ICEX=1.0mAdc(max)atRatedVoltage •Excell

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
供应商型号品牌批号封装库存备注价格
MOT/RCA
02+
TO-3
399
询价
更多J2N5883供应商 更新时间2024-4-28 10:00:00