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MSAFA1N100D

FastMOSFETDieforImplantableCardioDefibrillatorApplications

DESCRIPTION TheMM196isaMulti-ChipModule,MCM,incorporating6independentMOSFETdieintoaconvenientBGApackage.ThisdeviceisalsoavailableasdiscreteindividualpackagedPowermite3,seeMicrosemidatasheetUPF1N100.Thisdeviceisalsoavailableasbaredie,seeMicrosemidatasheet

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MSAFA1N100D

FastMOSFETDieforImplantableCardioDefibrillatorApplications

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MTB1N100E

TMOSPOWERFET1.0AMPERES1000VOLTS

TMOSPOWERFET1.0AMPERES1000VOLTSRDS(on)=9.0OHM TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilit

MotorolaMotorola, Inc

摩托罗拉

MTM1N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=10Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTP1N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=10Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTP1N100E

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=9mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCConverters ·ACandDCmotorcontrols ·LaserDrivers

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTP1N100E

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTP1N100E

TMOSPOWERFET1.0AMPERES1000VOLTSRDS(on)=9.0OHM

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhi

MotorolaMotorola, Inc

摩托罗拉

OM1N100SA

POWERMOSFETINHERMETICISOLATEDJEDECPACKAGE

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

OM1N100ST

POWERMOSFETINHERMETICISOLATEDJEDECPACKAGE

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

T1N100DL

TmaxMoldedCaseCircuitBreakers

ABBabb

ABB集团ABB(中国)有限公司

T1N100TL

TmaxMoldedCaseCircuitBreakers

ABBabb

ABB集团ABB(中国)有限公司

UPF1N100

SURFACEMOUNTN.CHANNELMOSFET

Description ThisdeviceisanN-Channelenhancementmode,highdensityMOSFET.Itispassivatedwith4um(40kA)ofoxynitride,andsuppliedinathreeleadedpackage. Features •RuggedPOWERMITE3®SurfaceMountPackage •LowOn-StateResistance •AvalancheandSurgeRated •HighFrequency

MicrosemiMicrosemi Corporation

美高森美美高森美公司

供应商型号品牌批号封装库存备注价格
IXYS
24+
TO-252AA
30000
晶体管-分立半导体产品-原装正品
询价
Littelfuse/IXYS
23+
TO-252AA
9555
支持大陆交货,美金交易。原装现货库存。
询价
IXYS
23+
SMD
67000
原装正品实单可谈 库存现货
询价
IXYS
2018+
TO252
6528
只做原装正品假一赔十!只要网上有上百分百有库存放心
询价
IXYS
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
询价
IXYS
22+23+
TO252
75986
绝对原装正品现货,全新深圳原装进口现货
询价
IXYS
23+
TO-252
12300
全新原装真实库存含13点增值税票!
询价
IXYS
20+
TO-252
90000
全新原装正品/库存充足
询价
IXYS
1931+
N/A
18
加我qq或微信,了解更多详细信息,体验一站式购物
询价
IXYS
1809+
TO-252
1675
就找我吧!--邀您体验愉快问购元件!
询价
更多IXTY1N100P-TRL供应商 更新时间2024-9-26 14:13:00