isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 1A@ TC=25℃ ·Drain Source Voltage -VDSS= 1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 10Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：289.66 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 1A@ TC=25℃ ·Drain Source Voltage -VDSS= 1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 10Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：272.67 Kbytes 页数：2 Pages

ISC

无锡固电

TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS(on) = 9.0 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand hi

文件：203.66 Kbytes 页数：8 Pages

Motorola

摩托罗拉

Power Field Effect Transistor

文件：216.34 Kbytes 页数：7 Pages

ONSEMI

安森美半导体