MTM1N100

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=10Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTP1N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=10Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTP1N100E

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=9mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCConverters ·ACandDCmotorcontrols ·LaserDrivers

MTP1N100E

TMOSPOWERFET1.0AMPERES1000VOLTSRDS(on)=9.0OHM

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhi

MTP1N100E

PowerFieldEffectTransistor

OM1N100SA

POWERMOSFETINHERMETICISOLATEDJEDECPACKAGE

OM1N100ST

POWERMOSFETINHERMETICISOLATEDJEDECPACKAGE

T1N100DL

TmaxMoldedCaseCircuitBreakers

T1N100TL

TmaxMoldedCaseCircuitBreakers

UPF1N100

SURFACEMOUNTN.CHANNELMOSFET

Description ThisdeviceisanN-Channelenhancementmode,highdensityMOSFET.Itispassivatedwith4um(40kA)ofoxynitride,andsuppliedinathreeleadedpackage. Features •RuggedPOWERMITE3®SurfaceMountPackage •LowOn-StateResistance •AvalancheandSurgeRated •HighFrequency