| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
OM1N100SA | POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | |
OptimizedforRadioFrequencyResponse OptimizedforRadioFrequencyResponse CanbeusedinmanyAM,FMandTV-IFapplications,replacingpointcontactdevices. Features ●Lowerleakagecurrent ●Flatjunctioncapacitance ●Highmechanicalstrength ●Atleast1millionhoursMTBF ●BKCsSigma-Bond™platingforproblemfreesold | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
GOLDBONDEDDIODES [VMI] 200V-1,000VSinglePhaseBridge 22.0A-25.0AForwardCurrent 70ns-3000nsRecoveryTime | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
GOLDBONDEDGERMANIUMDIODE [BKCInternationalElectronicsInc.] GOLDBONDEDDIODES | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
MEDIUMANDLOWVOLTAGEGERMANIUMDIODES MEDIUMANDLOWVOLTAGEGERMANIUMDIODES | AMMSEMI American Microsemiconductor | AMMSEMI | ||
GOLDBONDEDDIODES [VMI] 200V-1,000VSinglePhaseBridge 22.0A-25.0AForwardCurrent 70ns-3000nsRecoveryTime | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
OptimizedforRadioFrequencyResponse OptimizedforRadioFrequencyResponse CanbeusedinmanyAM,FMandTV-IFapplications,replacingpointcontactdevices. Features ●Lowerleakagecurrent ●Flatjunctioncapacitance ●Highmechanicalstrength ●Atleast1millionhoursMTBF ●BKCsSigma-Bond™platingforproblemfreesold | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
JEDECDO-7PACKAGE JEDECDO-7PACKAGE | ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 | ||
GERMANIUMDIODES GoldBondedGermaniumDiodesinDO-7Package | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
germaniumsignaldiode germaniumsignaldiode | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
FORMULAULMoldedCaseCircuitBreakers | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HighVoltageMOSFET HighVoltageMOSFET N-ChannelEnhancementMode AvalancheEnergyRated Features •Internationalstandardpackages •Highvoltage,LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Fastswitchingtimes Applications •Switch-modeandresonant-modepowersupplies •Flyb | IXYS IXYS Integrated Circuits Division | IXYS | ||
PolarPowerMOSFET PolarPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity Applications | IXYS IXYS Integrated Circuits Division | IXYS | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HighVoltageMOSFET N-ChannelEnhancementMode AvalancheEnergyRated Features ●Internationalstandardpackages ●Highvoltage,LowRDS(on)HDMOS™process ●Ruggedpolysilicongatecellstructure ●Fastswitchingtimes Applications ●Switch-modeandresonant-modepowersupplies ●Flybackinverters ●DCcho | IXYS IXYS Integrated Circuits Division | IXYS | ||
HighVoltageMOSFET HighVoltageMOSFET N-ChannelEnhancementMode AvalancheEnergyRated Features •Internationalstandardpackages •Highvoltage,LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Fastswitchingtimes Applications •Switch-modeandresonant-modepowersupplies •Flyb | IXYS IXYS Integrated Circuits Division | IXYS | ||
PolarPowerMOSFET PolarPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity Applications | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤15Ω@VGS=10V •Fullycharacterizedavalanchevoltageandcurrent •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATION •DC/DCConverter •Switch-ModeandResonant-Mo | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
详细参数
- 型号：
OM1N100SA
- 功能描述：
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 500MA I(D) | TO-257AA
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
OEG |
2023+环保现货 |
专业继电器 |
6800 |
专注军工、汽车、医疗、工业等方案配套一站式服务 |
询价 | ||
OHMITE |
24+25+/26+27+ |
车规-碳膜电阻 |
76052 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
omnrel |
18+ |
2173 |
公司大量全新正品 随时可以发货 |
询价 | |||
OMNREL |
22+ |
NA |
1120 |
中国航天工业部战略合作伙伴行业领导者 |
询价 | ||
ALEPH |
DIP-4p |
46800 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
ph |
dc9312 |
82 |
询价 | ||||
MOT |
23+ |
NA |
12000 |
全新原装假一赔十 |
询价 | ||
PHILIPS |
2023+ |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | |||
PHSSEMICONDUCTOR |
2021+ |
NA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
ADI |
22+ |
N/A |
60000 |
专注配单,只做原装现货 |
询价 |
相关规格书
更多- OM1N100ST
- OM2005
- OM200F120CMD
- OM200L120CMC
- OM2015
- OM2016
- OM2035
- OM2046
- OM2070
- OM2081/60
- OM2081/87
- OM2082/61
- OM2082/87
- OM2083/86
- OM-220/50-15
- OM-220/60-06
- OM-220/60-15
- OM2205
- OM2215E
- OM-225-QC
- OM2405
- OM2415
- OM2455
- OM-250
- OM-25-VT
- OM-265-A
- OM2705E
- OM2715E
- OM2940-05SM
- OM2940-12SM
- OM2940-12SRM
- OM2940-12STM
- OM2940-15SR
- OM2940-15STM
- OM2940-5SMM
- OM2940-5SRM
- OM2940-5STP
- OM2990-12N2M
- OM2990-12NMM
- OM2990-12NTM
- OM2990-12SMM
- OM2990-12SRM
- OM2990-12STM
- OM2990-15NK
- OM2990-15NT
相关库存
更多- OM200
- OM2005E-R58
- OM200L120CMA
- OM200L120CMD
- OM2015E-R58
- OM2025
- OM2045
- OM2055
- OM2070B
- OM2081/86
- OM2082/60
- OM2082/86
- OM2083/60
- OM-212-QC
- OM-220/50-25
- OM-220/60-09
- OM-220/60-25
- OM2215
- OM2225
- OM-2323
- OM-2414
- OM2435
- OM24G5
- OM-25-BN
- OM-260-QCTV
- OM2705
- OM2715
- OM2725
- OM2940-05STM
- OM2940-12SR
- OM2940-12ST
- OM2940-15SM
- OM2940-15SRM
- OM2940-5SM
- OM2940-5SR
- OM2940-5STM
- OM2940STM
- OM2990-12N2P
- OM2990-12NT
- OM2990-12SM
- OM2990-12SR
- OM2990-12ST
- OM2990-15N2
- OM2990-15NM
- OM2990-5.2N2M
