SURFACE MOUNT N . CHANNEL MOSFET

Description This device is an N-Channel enhancement mode, high density MOSFET. It is passivated with 4 um (40 kA) of oxynitride, and supplied in a three leaded package. Features • Rugged POWERMITE 3® Surface Mount Package • Low On-State Resistance • Avalanche and Surge Rated • High Frequency

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MICROSEMI

美高森美

SURFACE MOUNT N . CHANNEL MOSFET

Microchip

微芯科技

Optimized for Radio Frequency Response

Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Features ● Lower leakage current ● Flat junction capacitance ● High mechanical strength ● At least 1 million hours MTBF ● BKCs Sigma-Bond™ plating for problem free sold

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MICROSEMI

美高森美

GOLD BONDED DIODES

[VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

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GOLD BONDED GERMANIUM DIODE

[BKC International Electronics Inc.] GOLD BONDED DIODES

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