2-8 GHZ WIDE-BAND AMPLIFIER

DESCRIPTION The UPG110B is a GaAs monolithic integrated circuit designed for use as a wide-band amplifier from 2 GHz to 8 GHz. The device is most suitable for the gain stage of microwave communication systems where high gain characteristics are required. The UPG110 is available in a 4 pin flat pa

文件：73.99 Kbytes 页数：3 Pages

NEC

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2-8 GHZ WIDE-BAND AMPLIFIER

Renesas

瑞萨

2 to 8 GHz WIDE BAND AMPLIFIER CHIP

DESCRIPTION The UPG110B is a GaAs monolithic integrated circuit designed for use as a wide-band amplifier from 2 GHz to 8 GHz. The device is most suitable for the gain stage of microwave communication systems where high gain characteristics are required. The UPG110 is available in a 4 pin flat pa

文件：50.9 Kbytes 页数：8 Pages

NEC

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N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 100 Volt VDS * RDS(on)=3Ω * Low threshold voltage

文件：22.43 Kbytes 页数：1 Pages

ZETEX

N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET

FEATURES * LOW RDS(ON) - 3Ω

文件：20.08 Kbytes 页数：1 Pages

ZETEX