L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

文件：56.67 Kbytes 页数：8 Pages

NEC

瑞萨

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

文件：56.67 Kbytes 页数：8 Pages

NEC

瑞萨

쩍W L, S-BAND SPDT SWITCH

DESCRIPTION NECs UPG158TB is a GaAs MMIC L, S-band SPDT (Single Pole Double Throw) switch developed for mobile phone and L, S-band applications. FEATURES • SWITCH CONTROL VOLTAGE: Vcont (H) = 2.5 to 5.3 V (3.0 V TYP.) Vcont (L) = −0.2 to +0.2 V (0 V TYP.) • LOW INSERTION LOSS: L

文件：211.81 Kbytes 页数：8 Pages

CEL

GaAs INTEGRATED CIRCUIT

FEATURES • Switch control voltage : Vcont (H) = 2.5 to 5.3 V (3.0 V TYP.) : Vcont (L) = −0.2 to +0.2 V (0 V TYP.) • Low insertion loss : LINS1 = 0.30 dB TYP. @ f = 0.5 to 1.0 GHz, Vcont = 3.0 V/0 V : LINS2 = 0.40 dB TYP. @ f = 2.0 GHz, Vcont = 3.0 V/0 V : LINS3 = 0.90 dB MAX. @ f = 2.0 to 2.5

文件：246.35 Kbytes 页数：12 Pages

RENESAS

瑞萨

丝印：G1M；GaAs INTEGRATED CIRCUIT

FEATURES • Switch control voltage : Vcont (H) = 2.5 to 5.3 V (3.0 V TYP.) : Vcont (L) = −0.2 to +0.2 V (0 V TYP.) • Low insertion loss : LINS1 = 0.30 dB TYP. @ f = 0.5 to 1.0 GHz, Vcont = 3.0 V/0 V : LINS2 = 0.40 dB TYP. @ f = 2.0 GHz, Vcont = 3.0 V/0 V : LINS3 = 0.90 dB MAX. @ f = 2.0 to 2.5

文件：246.35 Kbytes 页数：12 Pages

RENESAS

瑞萨

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

文件：56.67 Kbytes 页数：8 Pages

NEC

瑞萨

쩍W L, S-BAND SPDT SWITCH

DESCRIPTION NECs UPG158TB is a GaAs MMIC L, S-band SPDT (Single Pole Double Throw) switch developed for mobile phone and L, S-band applications. FEATURES • SWITCH CONTROL VOLTAGE: Vcont (H) = 2.5 to 5.3 V (3.0 V TYP.) Vcont (L) = −0.2 to +0.2 V (0 V TYP.) • LOW INSERTION LOSS: L

文件：211.81 Kbytes 页数：8 Pages

CEL

L, S- BAND SPDT SWITCH

Renesas

瑞萨