丝印：G1Y；GaAs INTEGRATED CIRCUITS

FEATURES • Operation frequency : mPG2106TB : fopt = 889 to 960 MHz : mPG2110TB : fopt = 1 429 to 1 453 MHz • Supply voltage : mPG2106TB, mPG2110TB : VDD1, 2 = 2.7 to 3.3 V (3.0 V TYP.) • Circuit current : mPG2106TB, mPG2110TB : IDD = 25 mA TYP. @ VDD1, 2 = 3.0 V, VAGC = 2.5 V, Pout = +8 dBm •

文件：247.61 Kbytes 页数：14 Pages

RENESAS

瑞萨

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is

文件：87.38 Kbytes 页数：12 Pages

NEC

瑞萨

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION NECs UPG2110TB is a GaAs MMIC for PA driver amplifiers with variable gain functions which was developed for L-band applications. The device can operate with 3.0 V, having high gain and low distortion. FEATURES • LOW VOLTAGE OPERATION: VDD1 = VDD2 = 3.0 V, fRF = 1850 to 1910 MHz

文件：149.27 Kbytes 页数：3 Pages

CEL

RENESAS
TSON6

RENESAS

瑞萨

上传：深圳市正纳电子有限公司

RENESAS
TSON6

RENESAS

瑞萨

上传：深圳市正纳电子有限公司