丝印：G1J；GaAs INTEGRATED CIRCUIT

FEATURES • Low Insertion Loss : LINS = 0.7 dB TYP. @VCONT = +3.0 V/0 V, f = 2 GHz • High Linearity Switching: Pin (1 dB) = +33.0 dBm TYP. @VCONT = +3.0 V/0 V, f = 2 GHz • Small 6-pin super minimold package (Size: 2.0 ´ 1.25 ´ 0.9 mm)

文件：218.07 Kbytes 页数：10 Pages

RENESAS

瑞萨

L-BAND SPDT SWITCH

DESCRIPTION The UPG153TB and UPG155TB are L-band SPDT (Single Pole Double Throw) GaAs FET switches for digital cellular or cordless telephone application. The devices can operate from 100 MHz to 2.5 GHz with low insertion loss. These devices are housed in an original 6 pin super mini-mold package

文件：56.7 Kbytes 页数：8 Pages

NEC

瑞萨

L, S Band SPDT GaAs MMIC Switch

文件：36.44 Kbytes 页数：4 Pages

NEC

瑞萨

SOT363

RENESAS

瑞萨

上传：深圳市正纳电子有限公司

SOT363

NEC

瑞萨

上传：深圳市宇创芯科技有限公司