High Voltage, Low VCE(sat) IGBT

Features ● International standard package JEDEC TO-247 ● High frequency IGBT with guaranteed Short Circuit SOA capability ● Fast Fall Time for switching speeds up to 20 kHz ● 2nd generation HDMOSTM process ● Low VCE(sat) - for minimum on-state conduction losses ● MOS Gate turn-on

文件：88.89 Kbytes 页数：4 Pages

IXYS

艾赛斯

High Voltage, Low VCE(sat) IGBT

● International standard package JEDEC TO-247\n● High frequency IGBT with guaranteed\n   Short Circuit SOA capability\n● Fast Fall Time for switching speeds up to 20 kHz\n● 2nd generation HDMOSTM process\n● Low VCE(sat)\n   - for minimum on-state conduction losses\n● MOS Gate turn-on\n   - drive sim;

Littelfuse

力特

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1200V 75A 300W TO247AD

IXYS

艾赛斯

High Voltage IGBT S Series - Improved SCSOA Capability

High Voltage IGBT S Series - Improved SCSOA Capability Features • Epitaxial Silicon drift region - fast switching - small tail current • MOS gate turn-on for drive simplicity Applications • AC motor speed control • DC servo and robot drives • Uninterruptible power supplies (UPS) •

文件：58.35 Kbytes 页数：2 Pages

IXYS

艾赛斯

Short Circuit Rated PT IGBTs

·VCES :600V and 1200V\n·SCSOA capability\n·10 us short circuit withstand capability\n·B and B2 Class IGBTs with lower VCE (sat) optimized for Low to Medium Speed Applications;

Littelfuse

力特

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1200V 75A 300W TO247

IXYS

艾赛斯