IXSH45N120分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF中文资料

IXSH45N120属于分立半导体产品的晶体管-UGBT、MOSFET-单。由艾赛斯制造生产的IXSH45N120晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。

特性 Features

● International standard package JEDEC TO-247

● High frequency IGBT with guaranteed

Short Circuit SOA capability

● Fast Fall Time for switching speeds up to 20 kHz

● 2nd generation HDMOSTM process

● Low VCE(sat)

- for minimum on-state conduction losses

● MOS Gate turn-on

- drive simplicity

Applications

● AC motor speed control

● DC servo and robot drive

● Uninterruptible power supplies (UPS)

● Switch-mode and resonant-mode power supplies

● Welding

Advantages

● Easy to mount with 1 screw

(isolated mounting screw hole)

● High power density