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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
FGH40N60SFDTU	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH40N60SFDTU	文件：291.77 Kbytes Page：9 Pages	600V,40AFieldStopIGBT GeneralDescription UsingNovelFieldStopIGBTTechnology,Fairchild’snewsesriesofFieldStopIGBTsoffertheoptimumperformanceforInductionHeating,UPS,SMPSandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •Highcurrentcapability •Lo	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH40N60SFDTU	文件：815.57 Kbytes Page：9 Pages	IGBT-FieldStop600V,40A Description UsingNovelFieldStopIGBTTechnology,ONSemiconductor’s newseriesofFieldStopIGBTsoffertheoptimumperformancefor AutomotiveChargers,Inverter,andotherapplicationswherelow conductionandswitchinglossesareessential. Features •HighCurrentCapability •LowS	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
FGH40N60SFTU	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH40N60SFTU	文件：683.15 Kbytes Page：8 Pages	600V,40AFieldStopIGBT GeneralDescription UsingNovelFieldStopIGBTTechnology,Fairchild’snewsesriesofFieldStopIGBTsoffertheoptimumperformanceforInverter,UPS,SMPSandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •Highcurrentcapability •Lowsaturat	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH40N60SMD	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH40N60SMDF	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH40N60SMDF	文件：357.9 Kbytes Page：10 Pages	600V,40AFieldStopIGBT GeneralDescription UsingNovelFieldStopIGBTTechnology,Fairchild’snewseriesoffieldstop2ndgenerationIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welder,telecom,ESSandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •MaximumJunc	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH40N60UF	文件：710.57 Kbytes Page：8 Pages	600V,40AFieldStopIGBT GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild’sfieldstopIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •HighCurrentCapability •LowSaturationVoltage:VCE	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH40N60UF	文件：308.19 Kbytes Page：8 Pages	600V,40AFieldStopIGBT GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild’sfieldstopIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •HighCurrentCapability •LowSaturationVoltage:VCE	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH40N60UFD	文件：793.68 Kbytes Page：9 Pages	600V,40AFieldStopIGBT GeneralDescription UsingNovelFieldStopIGBTTechnology,Fairchild’snewsesriesofFieldStopIGBTsoffertheoptimumperformanceforInductionHeating,UPS,SMPSandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •Highcurrentcapability •Lowsaturati	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH40N60UFDTU	文件：291.84 Kbytes Page：9 Pages	HighCurrentCapability GeneralDescription UsingNovelFieldStopIGBTTechnology,Fairchild’snewsesriesofFieldStopIGBTsoffertheoptimumperformanceforInductionHeating,UPS,SMPSandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •Highcurrentcapability •Lowsaturati	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH40N60UFDTU	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH40N60UFTU	文件：308.19 Kbytes Page：8 Pages	600V,40AFieldStopIGBT GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild’sfieldstopIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •HighCurrentCapability •LowSaturationVoltage:VCE	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH40N60UFTU	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGI40N60SF	文件：728.76 Kbytes Page：8 Pages	600V,40AFieldStopIGBT	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGI40N60SFTU	文件：728.76 Kbytes Page：8 Pages	600V,40AFieldStopIGBT	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
G40N60	文件：601.42 Kbytes Page：8 Pages	Ultra-FastIGBT	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
G40N60UFD	文件：577.53 Kbytes Page：8 Pages	UltrafastIGBT	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HMG40N60A	文件：750.81 Kbytes Page：5 Pages	40A,600Vinsulatedgatebipolartransistor	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司	HMSEMI

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详细参数

型号：
IXKR40N60C
功能描述：
MOSFET 40 Amps 600V
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	IXKR40N60C	IXYS	24+	ISOPLUS247?	30000	晶体管-分立半导体产品-原装正品	询价
深圳市高捷芯城科技有限公司	IXKR40N60C	Littelfuse/IXYS	23+	TO-247	7814	支持大陆交货,美金交易。原装现货库存。	询价
深圳市鹏和科技有限公司	IXKR40N60C	IXYS	24+	TO-247	5000	只做原装公司现货	询价
深圳市永贝尔科技有限公司	IXKR40N60C	IXYS	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
中科航电(深圳)半导体技术有限公司	IXKR40N60C	IXYS	19+	ISOPLUS247?	56800	只卖原装正品!价格超越代理!可开增值税发票!	询价
深圳市百视威讯电子科技有限公司	IXKR40N60C		23+	N/A	64910	正品授权货源可靠	询价
深圳兆威电子有限公司	IXKR40N60C	VB	2019	ISOPLUS247TM	55000	绝对原装正品假一罚十!	询价
深圳市宏捷佳电子科技有限公司	IXKR40N60C	IXYS	23+	ISOPLUS24	12300	全新原装真实库存含13点增值税票!	询价
瀚佳科技(深圳)有限公司	IXKR40N60C	IXYS	18+	TO-247	2050	公司大量全新原装正品随时可以发货	询价
深圳市艾宇欣科技有限公司	IXKR40N60C	IXYS	1931+	N/A	18	加我qq或微信，了解更多详细信息,体验一站式购物	询价

更多IXKR40N60C供应商更新时间2024-5-21 20:44:00

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