PT IGBTs

·VCES: 300V to 1200V \n·IC(90): 2A to 200A \n·High Gain, Low conduction & switching losses. Classes:A2,A3,B2,B3,C2\n and C3 ·A2: DC to 10kHz. B2,B3: 15kHz to 40kHz C2: 40kHz to 100kHz \n C3: 50kHz -150kHz.·A3-Class Polar IGBT/Diode Types, Mid-Frequency Range (15KHz-40KHz)\n C3-300 V IGBT, ;

Littelfuse

力特

IGBT

IGBT High Voltage, Low VCE(sat) Features ● International standard packages JEDEC TO-268 and JEDEC TO-247 AD ● High current handling capability ● MOS Gate turn-on - drive simplicity ● Molding epoxies meet UL 94 V-0 flammability classification Applications ● AC motor speed control ● DC

文件：64.41 Kbytes 页数：2 Pages

IXYS

艾赛斯

Package：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1200V 75A 300W TO268

IXYS

艾赛斯

High Voltage, Low VCE(sat) IGBT

Features ● International standard package JEDEC TO-247 ● High frequency IGBT with guaranteed Short Circuit SOA capability ● Fast Fall Time for switching speeds up to 20 kHz ● 2nd generation HDMOSTM process ● Low VCE(sat) - for minimum on-state conduction losses ● MOS Gate turn-on

文件：88.89 Kbytes 页数：4 Pages

IXYS

艾赛斯

High Voltage IGBT S Series - Improved SCSOA Capability

High Voltage IGBT S Series - Improved SCSOA Capability Features • Epitaxial Silicon drift region - fast switching - small tail current • MOS gate turn-on for drive simplicity Applications • AC motor speed control • DC servo and robot drives • Uninterruptible power supplies (UPS) •

文件：58.35 Kbytes 页数：2 Pages

IXYS

艾赛斯

High Voltage IGBT S Series - Improved SCSOA Capability

High Voltage IGBT S Series - Improved SCSOA Capability Features • Epitaxial Silicon drift region - fast switching - small tail current • MOS gate turn-on for drive simplicity Applications • AC motor speed control • DC servo and robot drives • Uninterruptible power supplies (UPS) •

文件：58.35 Kbytes 页数：2 Pages

IXYS

艾赛斯