IXGH35N60B规格书供应商报价仙童半导体-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
35N60A	文件：851.66 Kbytes Page：5 Pages	35A600VN-channelenhancedfieldeffecttransistor	YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司	YFWDIODE
DAM35N60F	文件：260.05 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	DACO DACO	DACO
DAM35N60H	文件：243.21 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	DACO DACO	DACO
FCA35N60	文件：347.93 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=35A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=79mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FCA35N60	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCA35N60	文件：770.04 Kbytes Page：8 Pages	600VN-ChannelMOSFET Description SuperFET™isFarichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Features •650V@TJ=150°C •Typ.RDS(on)=0.079Ω •Ultralow	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCH35N60	文件：436.01 Kbytes Page：8 Pages	N-ChannelSuperFET짰MOSFET Description SuperFET®MOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thistechnologyistailoredtominimizeconductionloss,	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCH35N60	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGW35N60H	文件：635.16 Kbytes Page：6 Pages	DiscreteIGBT(High-SpeedVseries)600V/35A Features Lowpowerloss Lowswitchingsurgeandnoise Highreliability,highruggedness(RBSOA,SCSOAetc.) Applications Uninterruptiblepowersupply Powercoditionner Powerfactorcorrectioncircuit	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
FGW35N60HD	文件：640.08 Kbytes Page：8 Pages	DiscreteIGBT(High-SpeedVseries)600V/35A 600V/35A Features Lowpowerloss Lowswitchingsurgeandnoise Highreliability,highruggedness(RBSOA,SCSOAetc.) Applications Uninterruptiblepowersupply Powercoditionner Powerfactorcorrectioncircuit	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
ICE35N60W	文件：964.41 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	MICROSS MICROSS	MICROSS
ICE35N60W	文件：589.87 Kbytes Page：8 Pages	N-ChannelEnhancementModeMOSFET	ICEMOSIcemos Technology Icemos 技术	ICEMOS
ISPW35N60CFD	文件：335.61 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤118mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXDH35N60B	文件：101.3 Kbytes Page：4 Pages	IGBTwithoptionalDiode HighSpeed,LowSaturationVoltage Features ●NPTIGBTtechnology ●lowswitchinglosses ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●optionalultrafastdiode ●Internationalstandard	IXYS IXYS Integrated Circuits Division	IXYS
IXDP35N60B	文件：101.3 Kbytes Page：4 Pages	IGBTwithoptionalDiode HighSpeed,LowSaturationVoltage Features ●NPTIGBTtechnology ●lowswitchinglosses ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●optionalultrafastdiode ●Internationalstandard	IXYS IXYS Integrated Circuits Division	IXYS
SIHB35N60E	文件：162.62 Kbytes Page：7 Pages	ESeriesPowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
SIHB35N60E	文件：215.86 Kbytes Page：9 Pages	ESeriesPowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
SIHB35N60EF	文件：192.22 Kbytes Page：10 Pages	EFSeriesPowerMOSFETWithFastBodyDiode	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
SIHF35N60E	文件：183.32 Kbytes Page：9 Pages	ESeriesPowerMOSFET FEATURES •Aspecificonresistance(m-cm2)reductionof 25 •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
SIHF35N60E	文件：151.17 Kbytes Page：7 Pages	ESeriesPowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市华来深电子有限公司	IXGH35N60B	IXYS	23+	TO-247	8560	受权代理!全新原装现货特价热卖!	询价
中天科工半导体（深圳）有限公司	IXGH36N60A3	IXYS	20+	TO-247	36900	原装优势主营型号-可开原型号增税票	询价
深圳市艾宇欣科技有限公司	IXGH36N60A3	IXYS	1931+	N/A	18	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳市科雨电子有限公司	IXGH36N60A3	IXYS	1809+	TO-247	326	就找我吧!--邀您体验愉快问购元件!	询价
深圳市汇莱威科技有限公司	IXGH36N60A3	IXYS/艾赛斯		TO-247	265209	假一罚十原包原标签常备现货!	询价
深圳市国宇半导体科技有限公司	IXGH36N60A3	IXYS/艾赛斯	23+	TO-247	5425	公司只做原装正品	询价
深圳市威尔健半导体有限公司	IXGH36N60A3	IXYS/艾赛斯	23+	TO-247	50000	全新原装正品现货,支持订货	询价
深圳市易讯博科技有限公司	IXGH36N60A3	IXYS	22+	NA	18	加我QQ或微信咨询更多详细信息,	询价
深圳市河锋鑫科技有限公司	IXGH36N60A3	IXYS	22+	TO247AD (IXGH)	9000	原厂渠道,现货配单	询价
深圳廊盛科技有限公司	IXGH36N60A3	IXYS/艾赛斯	2022	TO-247	80000	原装现货,OEM渠道,欢迎咨询	询价

更多IXGH35N60B供应商更新时间2024-6-17 11:35:00

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