PT IGBTs

·VCES: 300V to 1200V \n·IC(90): 2A to 200A \n·High Gain, Low conduction & switching losses. Classes:A2,A3,B2,B3,C2\n and C3 ·A2: DC to 10kHz. B2,B3: 15kHz to 40kHz C2: 40kHz to 100kHz \n C3: 50kHz -150kHz.·A3-Class Polar IGBT/Diode Types, Mid-Frequency Range (15KHz-40KHz)\n C3-300 V IGBT, ;

Littelfuse

力特

PT IGBTs

·VCES: 300V to 1200V \n·IC(90): 2A to 200A \n·High Gain, Low conduction & switching losses. Classes:A2,A3,B2,B3,C2\n and C3 ·A2: DC to 10kHz. B2,B3: 15kHz to 40kHz C2: 40kHz to 100kHz \n C3: 50kHz -150kHz.·A3-Class Polar IGBT/Diode Types, Mid-Frequency Range (15KHz-40KHz)\n C3-300 V IGBT, ;

Littelfuse

力特

Low VCE(sat) IGBT with Diode High Speed IGBT with Diode

Features • International standard package JEDEC TO-247 AD • 2nd generation HDMOSTM process • Low VCE(sat) - for low on-state conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity • Voltage rating guaranteed at high temperature (125
C) Applicati

文件：151.39 Kbytes 页数：5 Pages

IXYS

艾赛斯

IGBT

Features • International standard packages JEDEC TO-220AB and TO-263AA • Second generation HDMOS™ process • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC chopper

文件：51.49 Kbytes 页数：2 Pages

IXYS

艾赛斯

IGBT

Features • International standard packages JEDEC TO-220AB and TO-263AA • Second generation HDMOS™ process • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC chopper

文件：51.49 Kbytes 页数：2 Pages

IXYS

艾赛斯

MegaMOS FET

N-Channel Enhancement Mode Features ● International standard packages ● Low RDS(on) HDMOS™ process ● Rugged polysilicon gate cell structure ● Low package inductance (

文件：106.76 Kbytes 页数：4 Pages

IXYS

艾赛斯