HiPerFET Power MOSFETs Q-Class

Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard package • Epoxy meet UL94V-0, flammability classification • miniBLOC with Aluminium nitride isolation • IXYS advanced low Qg process • Rugged polysilicon gate cell structure

文件：108.43 Kbytes 页数：2 Pages

IXYS

艾赛斯

N通道HiPerFET

• 国际标准包装\n• 坚固的多晶硅栅极单元结构\n• 适用于非钳位感应开关（UIS）\n• 快速本征整流器;

Littelfuse

力特

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 27A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 300mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：330.29 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFET Power MOSFETs Q-CLASS

Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages • Low RDS (on) • Rated for unclamped Inducti

文件：55.88 Kbytes 页数：2 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=27A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.3Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

文件：368.06 Kbytes 页数：2 Pages

ISC

无锡固电