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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IXFK27N80	文件：162.51 Kbytes Page：4 Pages	HiPerFETTMPowerMOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilic	IXYS IXYS Integrated Circuits Division	IXYS
IXFK27N80	文件：157.32 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs	IXYS IXYS Integrated Circuits Division	IXYS
IXFK27N80	文件：168.09 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilic	IXYS IXYS Integrated Circuits Division	IXYS
IXFK27N80	文件：328.55 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=27A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK27N80Q	文件：329.28 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=27A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK27N80Q	文件：55.88 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-CLASS SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated,LowQg,HighdV/dt,Lowtrr Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •RatedforunclampedInducti	IXYS IXYS Integrated Circuits Division	IXYS
IXFN27N80	文件：162.51 Kbytes Page：4 Pages	HiPerFETTMPowerMOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilic	IXYS IXYS Integrated Circuits Division	IXYS
IXFN27N80	文件：157.32 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs	IXYS IXYS Integrated Circuits Division	IXYS
IXFN27N80	文件：168.09 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilic	IXYS IXYS Integrated Circuits Division	IXYS
IXFN27N80Q	文件：108.43 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-Class SingleDieMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackage •EpoxymeetUL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •IXYSadvancedlowQgprocess •Ruggedpolysilicongatecellstructure	IXYS IXYS Integrated Circuits Division	IXYS
IXFR27N80	文件：330.29 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=27A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=300mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFR27N80Q	文件：55.88 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-CLASS SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated,LowQg,HighdV/dt,Lowtrr Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •RatedforunclampedInducti	IXYS IXYS Integrated Circuits Division	IXYS
IXFX27N80	文件：368.06 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=27A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFX27N80Q	文件：96.66 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-CLASS	IXYS IXYS Integrated Circuits Division	IXYS
IXFX27N80Q	文件：55.88 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-CLASS SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated,LowQg,HighdV/dt,Lowtrr Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •RatedforunclampedInducti	IXYS IXYS Integrated Circuits Division	IXYS

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳庞田科技有限公司	IXFN27N80IC	IXYS/艾赛斯	2023+	module	48000	AI智能識别、工業、汽車、醫療方案LPC批量及配套一站	询价
深圳市勤思达科技有限公司	IXFN27N80Q	IXYS	23+	模块	8500	全新原装现货,公司只做原装。	询价
深圳市博浩通科技有限公司	IXFN27N80Q	IXYS	23+	MOSFETN-CH800V27ASOT-227	1690	专业代理销售半导体模块,能提供更多数量	询价
深圳市凯斯宇科技有限公司	IXFN27N80Q	IXYS	2022	SOT-227B	58	原厂原装正品,价格超越代理	询价
深圳市永贝尔科技有限公司	IXFN27N80Q	IXYS	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
中天科工半导体（深圳）有限公司	IXFN27N80Q	IXYS	专业模块	MODULE	8513	模块原装主营-可开原型号增税票	询价
深圳市纳艾斯科技有限公司	IXFN27N80Q		2018+	module	6000	全新原装正品现货,假一赔佰	询价
深圳市斌腾达科技有限公司	IXFN27N80Q	IXYS	21+	SOT-227B	1000	主打产品价格优惠.全新原装正品	询价
深圳市维尔达电子有限公司	IXFN27N80Q	IXYS	2023+	MODULE	80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
瀚佳科技(深圳)有限公司	IXFN27N80Q	IXYS	18+		2173	公司大量全新正品随时可以发货	询价

更多IXFN27N80IC供应商更新时间2024-4-11 18:15:00

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