IXFN24N100IXYS模块规格书应用电路原装现货-114ic电子网

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IXFE24N100	文件：428.31 Kbytes Page：2 Pages	SingleMOSFETDie HiPerFETPowerMOSFET SingleMOSFETDie Features •ConformstoSOT-227Boutline •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance •FastintrinsicRectifier Applications •DC-DCconverters •Batte	IXYS IXYS Integrated Circuits Division	IXYS
IXFF24N100	文件：72.28 Kbytes Page：2 Pages	HiPerFETTMPowerMosfetinHighVoltageISOPLUSI4-PACTM Features •HiPerFETTMtechnology -lowRDSon -lowgatechargeforhighfrequencyoperation -unclampedinductiveswitching(UIS)capability -dv/dtruggedness -fastintrinsicreversediode •ISOPLUSI4-PAC™highvoltagepackage -isolatedbacksurface -enlargedcree	IXYS IXYS Integrated Circuits Division	IXYS
IXFK24N100	文件：137.63 Kbytes Page：4 Pages	HiPerFETTMPowerMOSFETs	IXYS IXYS Integrated Circuits Division	IXYS
IXFK24N100	文件：99.43 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrisicDiode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancherated •Lowpackageinductance •Fastintrinsicrectifier Applications •	IXYS IXYS Integrated Circuits Division	IXYS
IXFK24N100	文件：329.04 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.39Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK24N100F	文件：329.07 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.39Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK24N100F	文件：161.07 Kbytes Page：4 Pages	HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementModeAvalancheRated,LowQg,LowIntrinsicRgHighdV/dt,Lowtrr Features •RFcapableMOSFETs •Doublemetalprocessforlowgateresistance •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance	IXYS IXYS Integrated Circuits Division	IXYS
IXFK24N100F	文件：99.43 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrisicDiode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancherated •Lowpackageinductance •Fastintrinsicrectifier Applications •	IXYS IXYS Integrated Circuits Division	IXYS
IXFN24N100	文件：105.16 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs Features •Internationalstandardpackage •Encapsulatingepoxymeets UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageindu	IXYS IXYS Integrated Circuits Division	IXYS
IXFN24N100	文件：91.67 Kbytes Page：4 Pages	HiPerFET-TMPowerMOSFET Features •Internationalstandardpackage •Encapsulatingepoxymeets UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageindu	IXYS IXYS Integrated Circuits Division	IXYS
IXFN24N100F	文件：108 Kbytes Page：2 Pages	HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features •RFcapableMOSFETs •Doublemetalprocessforlowgateresistance •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect	IXYS IXYS Integrated Circuits Division	IXYS
IXFN24N100F	文件：105.16 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs Features •Internationalstandardpackage •Encapsulatingepoxymeets UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageindu	IXYS IXYS Integrated Circuits Division	IXYS
IXFR24N100	文件：36.22 Kbytes Page：2 Pages	HiPerFETTMPowerMOSFETsISOPLUS247TM(ElectricallyIsolatedBackSurface) HiPerFET™PowerMOSFETISOPLUS247™(ElectricallyIsolatedBackSurface) N-ChannelEnhancementModeAvalancheRated Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •Lowdraintotabcapacit	IXYS IXYS Integrated Circuits Division	IXYS
IXFR24N100	文件：330.4 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=390mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFX24N100	文件：367.67 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.39Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFX24N100	文件：139.35 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs	IXYS IXYS Integrated Circuits Division	IXYS
IXFX24N100	文件：137.63 Kbytes Page：4 Pages	HiPerFETTMPowerMOSFETs	IXYS IXYS Integrated Circuits Division	IXYS
IXFX24N100F	文件：161.07 Kbytes Page：4 Pages	HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementModeAvalancheRated,LowQg,LowIntrinsicRgHighdV/dt,Lowtrr Features •RFcapableMOSFETs •Doublemetalprocessforlowgateresistance •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance	IXYS IXYS Integrated Circuits Division	IXYS
IXFX24N100F	文件：99.43 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrisicDiode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancherated •Lowpackageinductance •Fastintrinsicrectifier Applications •	IXYS IXYS Integrated Circuits Division	IXYS
IXTX24N100	文件：103.68 Kbytes Page：4 Pages	N-ChannelEnhancementMode	IXYS IXYS Integrated Circuits Division	IXYS

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市锦达世纪科技有限公司	IXFN24N100IXYS模块				0		询价
深圳市博浩通科技有限公司	IXFN24N100Q2	IXYS	23+	模块	465	价格优势/原装现货/客户至上/欢迎广大客户来电查询	询价
深圳市凯斯宇科技有限公司	IXFN24N90Q	IXYS	2022	SOT-227B	58	原厂原装正品,价格超越代理	询价
中天科工半导体（深圳）有限公司	IXFN24N90Q	IXYS/艾赛斯	专业模块	MODULE	8513	模块原装主营-可开原型号增税票	询价
深圳市斌腾达科技有限公司	IXFN24N90Q	IXYS	21+	SOT-227B	1000	主打产品价格优惠.全新原装正品	询价
瀚佳科技(深圳)有限公司	IXFN24N90Q	IXYS	16+	MODULE	2100	公司大量全新现货随时可以发货	询价
深圳市艾宇欣科技有限公司	IXFN24N90Q	IXYS	1931+	N/A	18	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳市科雨电子有限公司	IXFN24N90Q	IXYS	1809+	SOT-227	96	就找我吧!--邀您体验愉快问购元件!	询价
深圳市易讯博科技有限公司	IXFN24N90Q	IXYS	22+	NA	18	加我QQ或微信咨询更多详细信息,	询价
深圳市河锋鑫科技有限公司	IXFN24N90Q	IXYS	22+	SOT2274 miniBLOC	9000	原厂渠道,现货配单	询价

更多IXFN24N100IXYS模块供应商更新时间2021-9-16 14:01:00

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