HiPerFET Power MOSFETs Q-CLASS

Features ● IXYS advanced low Qg process ● Low gate charge and capacitances - easier to drive - faster switching ● International standard packages ● Low RDS (on) ● Rated for unclamped Inductive load switching (UIS) rated ● Molding epoxies meet UL 94 V-0 flammability classification Ap

文件：102.59 Kbytes 页数：2 Pages

IXYS

艾赛斯

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

Littelfuse

力特

HiPerFET Power MOSFETs Q-CLASS

Features ● IXYS advanced low Qg process ● Low gate charge and capacitances - easier to drive - faster switching ● International standard packages ● Low RDS (on) ● Rated for unclamped Inductive load switching (UIS) rated ● Molding epoxies meet UL 94 V-0 flammability classification Ap

文件：102.59 Kbytes 页数：2 Pages

IXYS

艾赛斯

SOT-227小信号场效应晶体管

IXYS艾赛斯

上传：芯有半导体（深圳）有限公司

SOT-227

IXYS

艾赛斯

上传：深圳市维众兴电子有限公司