isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1500V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.93 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

·FEATURES ·Drain Current –ID= 9.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.0Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High speed power sw

文件：320.45 Kbytes 页数：2 Pages

ISC

无锡固电

Single N?묬hannel Power MOSFET

文件：513.96 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Single N?묬hannel Power MOSFET

文件：513.96 Kbytes 页数：5 Pages

ONSEMI

安森美半导体