isc N-Channel MOSFET Transistor

·FEATURES ·Drain Current –ID= 9.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.0Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High speed power sw

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ISC

无锡固电

Single N?묬hannel Power MOSFET

文件：513.96 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Single N?묬hannel Power MOSFET

文件：513.96 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET, 1500V, 9A, 3.0Ω

The 1500V HV MOSFET ‘NDUL09N150C', with low on resistance and high speed switching, contributes to low power consumption and high efficiency of the industrial equipment-related applications which require HV power supplies. In addition, the flyback circuit with this product can realize the 'cost effe • Low On-Resistance\n• Improves efficiency by reducing conduction losses\n• Ultra High Voltage\n• Most suitable for SMPS applications\n• High Speed Switching\n• Reduces dynamic power losses\n• 100% Avalanche Tested\n• Voltage overstress safeguard\n• Pb-Free and RoHS Compliance\n• Environment fri;

ONSEMI

安森美半导体