Single N?묬hannel Power MOSFET

文件：513.96 Kbytes 页数：5 Pages

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安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1500V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.93 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

·FEATURES ·Drain Current –ID= 9.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.0Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High speed power sw

文件：320.45 Kbytes 页数：2 Pages

ISC

无锡固电

Single N?묬hannel Power MOSFET

文件：513.96 Kbytes 页数：5 Pages

ONSEMI

安森美半导体